Patterning an Erosion-Free Polymeric Semiconductor Channel for Reliable All-Photolithography Organic Electronics

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Abstract
Reliable patterning of organic semiconductors (OSCs) with high uniformity is essential to all-photolithography organic electronics. However, the majority of cross-linked OSCs experience performance fluctuations after photolithography because of the inherent vulnerability of low-ordered regions. Herein, we develop an anti-solution penetration photolithography process to achieve the reliable patterning of the OSC layer for all-photolithography integrated organic electronics. Using a thick and highly cross-linked semiconductor film and a low-solubility developer, an erosion-free semiconductor channel is obtained with a high mobility of up to 1.254 cm2 V-1 s-1 and a uniform threshold voltage close to zero. Compared with existing all-photolithography organic circuits, the unit logic gate area consumption is lower by 1-3 orders of magnitude at 0.0069 mm2, while the transistor density is higher by 1-2 orders of magnitude at 6780 Tr cm-2. The miniaturized organic inverters maintain uncompromised voltage gains, and the 15-stage organic ring oscillators feature higher oscillation frequencies, making them promising for applications in wide-ranging integrated organic circuits.
Funding Information
  • Fudan University
  • Ministry of Science and Technology of the People's Republic of China (2018YFA0703200)
  • National Natural Science Foundation of China (61890940)
  • Chinese Academy of Sciences (XDB30000000)
  • Corning Inc.

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