Electronic Nanosensors Based On Nanotransistor With Bistability Behaviour
- 10 February 2010
- book chapter
- Published by Springer Nature
- p. 341-349
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- PHENOMENA IN RESONANT TUNNELING THROUGH DEGENERATED ENERGY STATES WITH ELECTRON CORRELATIONInternational Journal of Modern Physics B, 2007
- Memory effect in a molecular quantum dot with strong electron-vibron interactionPhysical Review B, 2003
- Nonvolatile Molecular Memory Elements Based on Ambipolar Nanotube Field Effect TransistorsNano Letters, 2002
- High-Mobility Nanotube Transistor MemoryNano Letters, 2002
- Two-electron elastic tunneling in low-dimensional conductorsPhysical Review B, 2002
- Resonant electron tunneling through double-degenerate local state with account of strong electron–phonon interactionPhysica E: Low-dimensional Systems and Nanostructures, 2000
- Electronically Configurable Molecular-Based Logic GatesScience, 1999
- Bistability of resonant electron tunnelling through degenerate states of a quantum wellJournal of Physics: Condensed Matter, 1998