Mechanism for bipolar switching in aPt/TiO2/Ptresistive switching cell

We suggest a possible mechanism for bipolar switching in a $\text{Pt}/{\text{TiO}}_2/\text{Pt}$ resistive switching cell in terms of electrochemical reactions involving oxygen ions/vacancies. The electrochemical reactions are considered to take place at an interface between Pt and ${\text{TiO}}_2$ solid electrolyte, and they modulate the Schottky barrier height at the interface. Calculation results using this proposed mechanism can explain a bipolar switching behavior and semiquantitatively describe experimental data.