Doping of amorphous-hydrogenated carbon films by ion implantation
Authors:
- O. AmirOAO. Amir
- R. KalishRKR. Kalish
- 25 March 1992
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 1 (2-4) , 364-368
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Properties of nitrogen-doped amorphous hydrogenated carbon filmsJournal of Applied Physics, 1991
- Investigation on diamondlike carbon films: Structure, properties and doping effectNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- The effect of MeV ion irradiation on the hydrogen content and resistivity of direct ion beam deposited diamondlike carbonNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Electronic and atomic structure of amorphous carbonPhysical Review B, 1987
- Amorphous carbonAdvances in Physics, 1986
- Diamond-like carbon films of low hydrogen contents made with a mixture of hydrocarbon and reactive gasThin Solid Films, 1984
- Properties of hydrogenated amorphous carbon films and the effects of dopingPhilosophical Magazine Part B, 1982
- Thermopower of doped semiconducting hydrogenated amorphous carbon filmsSolid State Communications, 1982
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Chemical modification of the electrical properties of hydrogenated amorphous carbon filmsSolid State Communications, 1980