Static and dynamic performance assessment of commercial SiC MOSFET power modules
Authors:
- 1 September 2015
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 23293721,p. 4899-4906
Abstract
This paper deals with static and dynamic measurements performed with full SiC MOSFET power modules. The voltage rating of the power modules is 1200 V and the current rating is 800 A. The on-resistances (R ON ) of the power modules were measured to be 6.0-10.0 mΩ, the measured blocking voltages were 1300-1400 V, and the threshold voltages were found to be around 3.0-3.5 V at 300 K. Evaluation of the dynamic performance has been carried out in a double-pulse tester with the use of commercially available gate drivers. A clean (i.e., almost oscillation and overshoot free) turn on and turn off transient behavior is obtained with negligible reverse recovery losses. The measured turn-on and turn-off losses at 800 V, 340 A, were 117 mJ and 40 mJ, respectively. With fixed supply voltage and load current, the energy-loss increases linearly with the gate resistance when varied from 2.5 to 20 mΩ. The energy losses remain insensitive with variation of temperature for a fixed supply voltage and current when tested up to the prescribed junction temperature of 150 °C.Keywords
This publication has 19 references indexed in Scilit:
- High Quality 150 mm 4H SiC Wafers for Power Device ProductionMaterials Science Forum, 2015
- 150 mm 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary ReactorMaterials Science Forum, 2015
- On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETsActive and Passive Electronic Components, 2015
- 10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems2014
- A Survey of Wide Bandgap Power Semiconductor DevicesIEEE Transactions on Power Electronics, 2014
- Predicting potential of 4H-SiC power devices over 10 kV2013
- Design and Technology Considerations for SiC Bipolar Devices: BJTs, IGBTs, and GTOs2009
- Remarkable Increase in the Channel Mobility of SiC-MOSFETs by Controlling the Interfacial $\hbox{SiO}_{2}$ Layer Between $\hbox{Al}_{2}\hbox{O}_{3}$ and SiCIEEE Transactions on Electron Devices, 2008
- 200 C Operation of a DC-DC Converter with SiC Power Devices2007
- High field effect mobility in Si face 4H-SiC MOSFET transistorsElectronics Letters, 2004