A 2.4/3.5/4.9/5.2/5.7-GHz concurrent multiband low noise amplifier using InGaP/GaAs HBT technology
Authors:
- 4 October 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 14 (10) , 463-465
Abstract
A 2.4/3.5/4.9/5.2/5.7-GHz concurrent multiband low noise amplifier using InGaP/GaAs HBT technology is demonstrated for the first time. Multiband input matching is achieved by newly developed capacitive feedback instead of traditional inductive feedback technique. The experimental results showed that input return loss of -12, -16, -14, -13, and -12 dB, voltage gain of 29, 27, 24, 23.6, and 22.5 dB and noise figure of 2.89, 2.76, 2.95, 2.98, and 3.1 dB were obtained at 2.4/3.5/4.9/5.2/5.7 GHz, respectively.Keywords
This publication has 8 references indexed in Scilit:
- A SiGe low noise amplifier for 2.4/5.2/5.7 GHz WLAN applications2003
- A multi standard single-chip transceiver covering 5.15 to 5.85GHz2003
- Dual-band high-linearity variable-gain low-noise amplifiers for wireless applications2003
- A triple-band 900/1800/1900 MHz low-power image-reject front-end for GSM2002
- Concurrent dual-band CMOS low noise amplifiers and receiver architectures2002
- The origin of the kink phenomenon of transistor scattering parameter S/sub 22/IEEE Transactions on Microwave Theory and Techniques, 2001
- A 900-MHz/1.8-GHz CMOS receiver for dual-band applicationsIEEE Journal of Solid-State Circuits, 1998
- A 1-GHz BiCMOS RF front-end ICIEEE Journal of Solid-State Circuits, 1994