High-Speed, Low-Power, Magnetic Non-Volatile Flip-Flop With Voltage-Controlled, Magnetic Anisotropy Assistance
Authors:
- 30 August 2016
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Magnetics Letters
- Vol. 7 (1949307X) , 1-5
Abstract
A magnetic non-volatile flip-flop (MNV-FF) design, with the assistance of voltage-controlled magnetic anisotropy (VCMA) effect, is proposed for low-power and high-speed applications. The MNV-FF employs perpendicular-anisotropy magnetic junnel junctions (MTJs) and exploits the VCMA effect for assisting data backup operations, in cooperation with either spin-transfer torque (STT) or spin-Hall effect (SHE). Thanks to the VCMA assistance, the required STT or SHE current density and pulse duration can be greatly reduced for MTJ switching, resulting in faster and more energy-efficient operations. Our simulation results show that the proposed VCMA-assisted MNV-FFs can achieve 98.4% and 74.6% improvement in data backup energy, and 89.5% and 19.0% improvement in data backup delay, compared to conventional STTand SHE-based MNV-FFs, respectively.Keywords
Funding Information
- China Postdoctoral Science Foundation (2015M570024)
- National Natural Science Foundation of China (61501013, 61571023)
- Beijing Municipal of Science and Technology (D15110300320000)
- 111 talent program (B16001)
This publication has 21 references indexed in Scilit:
- Electric-Field Control of Spin-Orbit Interaction for Low-Power SpintronicsProceedings of the IEEE, 2016
- Low-Power, High-Density Spintronic Programmable Logic With Voltage-Gated Spin Hall Effect in Magnetic Tunnel JunctionsIEEE Magnetics Letters, 2016
- MTJ-Based State Retentive Flip-Flop With Enhanced-Scan Capability to Sustain Sudden Power FailureIEEE Transactions on Circuits and Systems I: Regular Papers, 2015
- Magnetoelectric Random Access Memory-Based Circuit Design by Using Voltage-Controlled Magnetic Anisotropy in Magnetic Tunnel JunctionsIEEE Transactions on Nanotechnology, 2015
- Magnetic non‐volatile flip‐flop with spin‐Hall assistancePhysica Status Solidi (RRL) – Rapid Research Letters, 2015
- A study of perpendicular-anisotropy magnetic tunnel junction switched by spin-Hall-assisted spin-transfer torque2015
- SHE-NVFF: Spin Hall Effect-Based Nonvolatile Flip-Flop for Power Gating ArchitectureIEEE Electron Device Letters, 2014
- Electric-field-assisted switching in magnetic tunnel junctionsNature Materials, 2011
- Nonvolatile Magnetic Flip-Flop for Standby-Power-Free SoCsIEEE Journal of Solid-State Circuits, 2009
- Moore's Law Forever?Science, 2003