Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs
Authors:
- Yang-Kyu ChoiYCYang-Kyu Choi
- Daewon HaDHDaewon Ha
- S. BalasubramanianSBS. Balasubramanian
- Tsu-Jae KingTKTsu-Jae King
- J. BokorJBJ. Bokor
- 5 June 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 24 (3) , 186-188
Abstract
The hydrogen annealing process has been used to improve surface roughness of the Si-fin in CMOS FinFETs for the first time. Hydrogen annealing was performed after Si-fin etch and before gate oxidation. As a result, increased saturation current with a lowered threshold voltage and a decreased low-frequency noise level over the entire range of drain current have been attained. The low-frequency noise characteristics indicate that the oxide trap density is reduced by a factor of 3 due to annealing. These results suggest that hydrogen annealing is very effective for improving device performance and for attaining a high-quality surface of the etched Si-fin.Keywords
This publication has 9 references indexed in Scilit:
- Low-frequency noise characteristics in p-channel FinFETsIEEE Electron Device Letters, 2002
- Spacer FinFET: nanoscale double-gate CMOS technology for the terabit eraSolid-State Electronics, 2002
- Nanoscale CMOS spacer FinFET for the terabit eraIEEE Electron Device Letters, 2002
- Static and low frequency noise characterization of surface- and buried-mode 0.1 μm P and N MOSFETsMicroelectronics Reliability, 2002
- Micro-structure Transformation of Silicon: A Newly Developed Transformation Technology for Patterning Silicon Surfaces using the Surface Migration of Silicon Atoms by Hydrogen AnnealingJapanese Journal of Applied Physics, 2000
- On surface roughness-limited mobility in highly doped n-MOSFET'sIEEE Transactions on Electron Devices, 1999
- Evidence of spontaneous formation of steps on silicon (100)Physical Review B, 1996
- Surface modification of silicon (111) by annealing at high temperature in hydrogenApplied Physics Letters, 1996
- Improved Analysis of Low Frequency Noise in Field-Effect MOS TransistorsPhysica Status Solidi (a), 1991