Band-Structure Effects on the Performance of III–V Ultrathin-Body SOI MOSFETs
Authors:
- 22 April 2008
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 55 (5) , 1116-1122
Abstract
This paper examines the impact of band structure on deeply scaled III-V devices by using a self-consistent 20-band -SO semiempirical atomistic tight-binding model. The density of states and the ballistic transport for both GaAs and InAs ultrathin-body n-MOSFETs are calculated and compared with the commonly used bulk effective mass approximation, including all the valleys (, , and ). Our results show that for III-V semiconductors under strong quantum confinement, the conduction band nonparabolicity affects the confinement effective masses and, therefore, changes the relative importance of different valleys. A parabolic effective mass model with bulk effective masses fails to capture these effects and leads to significant errors, and therefore, a rigorous treatment of the full band structure is required.Keywords
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