Novel N/sub 2/O-oxynitridation technology for forming highly reliable EEPROM tunnel oxide films
Authors:
- 1 November 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (11) , 587-589
Abstract
Ultrathin ( approximately=6 nm) oxynitrided SiO/sub 2/ (SiO/sub x/N/sub y/) films have been formed on SiKeywords
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