A 9 mW, Q-Band Direct-Conversion I/Q Modulator in SiGe BiCMOS Process
Authors:
- 17 May 2012
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 22 (6) , 327-329
Abstract
This letter demonstrates a low-power, Q-band, direct-conversion I/Q modulator. The modulator consumes 9 mW power from a 1 V supply and delivers - 9.3 dBm RF power at 39 GHz. The modulator exhibits an EVM of 5.3% for 16QAM at 3 Msymbols/s. The circuit is fabricated in 0.12 μm SiGe BiCMOS process and occupies an area of 1.5 mm2.Keywords
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