Resistorless BJT bias and curvature compensation circuit at 3.4 nW for CMOS bandgap voltage references
Authors:
Open Access
- 1 June 2014
- journal article
- circuits and-systems
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 50 (12) , 863-864
Abstract
A novel resistorless bipolar junction transistor (BJT) bias and curvature compensation circuit for ultra‐low‐power CMOS bandgap voltage references (BGRs) is introduced. It works in the nanoampere current consumption range and under 1 V of power supply. The analytical behaviour of the circuit is described and simulation results for a 0.18 μm CMOS standard process are analysed. A junction voltage of 550 mV at room temperature is obtained (at an emitter current of 3.5 nA), presenting an almost linear temperature dependence, whereas the power consumption of the whole circuit is 3.4 nW under a 0.8 V power supply at 27°C. The estimated silicon area is 0.00135 mm 2 .Keywords
This publication has 6 references indexed in Scilit:
- 1.2-V Supply, 100-nW, 1.09-V Bandgap and 0.7-V Supply, 52.5-nW, 0.55-V Subbandgap Reference Circuits for Nanowatt CMOS LSIsIEEE Journal of Solid-State Circuits, 2013
- A High-Precision Compensated CMOS Bandgap Voltage Reference Without ResistorsIEEE Transactions on Circuits and Systems II: Express Briefs, 2010
- An MOS transistor model for analog circuit designIEEE Journal of Solid-State Circuits, 1998
- A precision curvature-compensated CMOS bandgap referenceIEEE Journal of Solid-State Circuits, 1983
- Accurate analysis of temperature effects in I/SUB c/V/SUB BE/ characteristics with application to bandgap reference sourcesIEEE Journal of Solid-State Circuits, 1980
- New developments in IC voltage regulatorsIEEE Journal of Solid-State Circuits, 1971