Threshold transport of high-mobility two-dimensional electron gas in GaAs/AlGaAs heterostructures
Authors:
- 17 October 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (16) , 1533-1535
Abstract
We have measured the conductivity of the high‐mobility two‐dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures at low temperatures as a function of the carrier density (n) close to the conduction threshold. We find that metallic conduction persists to n∼1.4×1010 cm−2, and that the mobility drops much faster than that expected from impurity scattering for n below a characteristic density, which decreases with increasing AlGaAs spacer thickness. This behavior is explained by the effect of the 2DEG density fluctuations at low n close to the conduction threshold, first predicted by Brews’ theory [J. Appl. Phys. 4 6, 2181 (1975)].Keywords
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