Abstract
In this paper, an antenna-coupled bias-less pulsed GaN-based photoconductive THz emitter is designed and investigated numerically. The proposed THz emitter is composed of an asymmetric metal-semiconductor-metal structure, which is enhanced by using both plasmonic and piezotronic effects. The top metal electrode in our design consists of nano-slits and nano-gratings, so that the incident wave coupling to the active region, and the output THz radiation of the photoconductor are improved. Benefiting from both the piezoelectric property of GaN, and the designed metal plasmonic structure on the conventional pulsed GaN-based photoconductive THz emitter, we show that the output current can be enhanced by the factor of about 4.37 (from 40μA to 175μA), while the output bandwidth has been increased about 3.8%. The proposed enhanced plasmonic piezotronic THz emitter can lead to emerging a new generation of efficient and tunable THz photoconductive emitters.

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