Phonon‐Assisted Anti‐Stokes Lasing in ZnTe Nanoribbons
- 17 November 2015
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 28 (2) , 276-283
Abstract
Phonon-assisted anti-Stokes emission and its stimulated emission in polar semiconductor ZnTe are demonstrated via the annihilation of phonons as a result of strong exciton–phonon coupling. The findings are not only important for developing high-power radiation-balanced lasers, but are also promising for manufacturing ultraefficient solid-state laser coolers.Keywords
Funding Information
- AcRF Tier2 (MOE2011-T2-2-051)
- Tier1 (2013-T1-002-232)
- Singapore National Research Foundation (NRF-NRFI2015-03)
- NTU (M4080514)
- MOE Tier 2 (MOE2013-T2-1-081)
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