Photoconductive gain and generation-recombination noise in multiple-quantum-well infrared detectors
Author:
- 27 December 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (26) , 3589-3591
Abstract
The photoconductive gain, g, and generation-recombination (GR) noise of multiple-quantum-well infrared detectors are calculated for structures in which the well capture probability, pc, and the fraction of current derived from tunneling are allowed to vary through the structure. For uniform pc and no tunneling current, g=1/(Npc), where N is the number of wells. The GR noise power under the same conditions is 4eĪgB(1−pc/2), where e is electronic charge, Ī is the mean current, and B is the measurement bandwidth. When pc≪1, the noise contributions from carrier generation and decay (recombination) are equal as in a homogeneous photoconductor. However, when pc→1, the recombination noise decreases to zero, and the noise is equal to the shot noise of N series-connected, independent junctions.Keywords
This publication has 10 references indexed in Scilit:
- Noise gain and operating temperature of quantum well infrared photodetectorsApplied Physics Letters, 1992
- Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectorsJournal of Applied Physics, 1992
- Photoconductive gain mechanism of quantum-well intersubband infrared detectorsApplied Physics Letters, 1992
- Low dark current step-bound-to-miniband transition InGaAs/GaAs/AlGaAs multiquantum-well infrared detectorApplied Physics Letters, 1992
- Infrared absorption and photoconductive gain of quantum well infrared photodetectorsApplied Physics Letters, 1992
- Extended long-wavelength λ=11–15-μm GaAs/AlxGa1−xAs quantum-well infrared photodetectorsJournal of Applied Physics, 1991
- Reply to ‘‘Comment on ‘High-detectivity GaAs quantum-well infrared detectors with peak responsivity at 8.2 μm’ ’’Journal of Applied Physics, 1991
- Large photoconductive gain in quantum well infrared photodetectorsApplied Physics Letters, 1990
- High-detectivity GaAs quantum well infrared detectors with peak responsivity at 8.2 μmJournal of Applied Physics, 1990
- High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectorsApplied Physics Letters, 1990