Direct integration of sol–gel derived PZT thin films on single crystal diamond

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Abstract
The integration of lead zirconate titanate (PZT) on a single crystal diamond substrate enables the realization of micro/nano electromechanical systems devices, such as high-frequency surface acoustic wave (SAW) devices. However, depositing a PZT thin film directly on a single crystal diamond without a buffer layer is always challenging due to the formation of an undesired pyrochlore phase. In this work, we report the realization of a perovskite PZT thin film directly on a single crystal diamond (100) substrate via the sol–gel synthesis method for the first time. Structural analysis using x-ray diffraction and Raman spectroscopy confirmed the formation of the perovskite phase at an optimal annealing temperature of 600 °C. Ferroelectric characterization revealed a remanent polarization of 15.35 µ C cm −2 , and a coercive field of 154.03 V cm −1 . The film exhibited a minimal leakage current of approximately 10 −12 A. The resonant behavior of the device at GHz frequencies is validated by the presence of acoustic modes using COMSOL Multiphysics. These results highlight the potential of PZT/diamond heterostructures for high-performance SAW applications.
Funding Information
  • Fund for Improvement of S&T Infrastructure (FIST), Government of India (FIST SR/FST/ET-I/2021/840)
  • Science and Engineering Research Board (SERB), Department of Science and Technology (CRG/2023/002703)

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