High-Performance Pentacene/ZnO UV-Visible Photodetector Using Solution Method

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Abstract
This work reports a Pd/Al₂O₃/ZnO/pentacene/PEDOT:PSS/indium-doped tin oxide (ITO) structure-based high-performance ultraviolet (UV)-visible photodetector fabricated on an ITO substrate. The poly(3,4-ethylene dioxythiophene) polystyrene sulfonate (PEDOT:PSS) acts as the hole transport layer (HTL), while aluminum oxide (Al₂O₃) acts as a hole blocking layer (HBL) to reduce the dark current. At -1 V bias voltage, the proposed device shows the responsivity, sensitivity, detectivity, and external quantum efficiency (EQE) of 25.51 A/W, 2574.19, 1.52 x 10¹⁶ Jones, and 10171% at 311 nm (UV region) while the corresponding values at 565 nm (visible region) are found to be 0.36 A/W, 346.66, 2.17 x 10¹⁴ Jones, and 79.65%, respectively.

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