Enhanced ultraviolet photoresponse in a graphene-gated ultra-thin Si-based photodiode

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Abstract
We present an ultra-thin lateral SOI PIN photodiode with transferred monolayer graphene as the transparent gate, to provide enhanced ultraviolet (UV) performance and mechanical flexibility beyond standard Si-based devices. The device dark current shows intact characteristics after the post-CMOS thinning and graphene transfer processing steps. The device responsivity presents high potential in UV and visible wavelength detections (i.e. within the 200–900 nm range) under monochromatic light illumination. A maximum responsivity of 0.18 A W −1 has been experimentally achieved at 390 nm wavelength and validated by simulation, for a diode with intrinsic length L i of 20 μ m. Additionally, the ~5 μ m-thick device chip with direct board assembly paves the way towards the development of hybrid flexible electronics.
Funding Information
  • Fundamental Research Fund for the Central Universities (531107051124)
  • European Regional Development Fund (ERDF) and Wallonia, Belgium (Micro+ project)
  • Technology Program (Major Project) of Changsha (kq1804001)
  • National Natural Science Foundation of China (61811540408)

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