GaAs milling with neon focused ion beam: Comparison with gallium focused ion beam milling and subsurface damage analysis
Authors:
- Deying XiaDXDeying Xia
- Ying-Bing JiangYJYing-Bing Jiang
- John NotteJNJohn Notte
- Doug RuntDRDoug Runt
- 1 February 2021
- journal article
- research article
- Published by Elsevier in Applied Surface Science
- Vol. 538
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Exploring cryogenic focused ion beam milling as a Group III–V device fabrication toolNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2014
- Helium ion microscopyJournal of Vacuum Science & Technology B, 2014
- Spontaneous Growth of Gallium-Filled Microcapillaries on Ion-Bombarded GaNPhysical Review Letters, 2013
- Nanomachining with a focused neon beam: A preliminary investigation for semiconductor circuit editing and failure analysisJournal of Vacuum Science & Technology B, 2011
- Mechanisms of nanodot formation under focused ion beam irradiation in compound semiconductorsJournal of Applied Physics, 2011
- XeF2gas-assisted focused-electron-beam-induced etching of GaAs with 30 nm resolutionNanotechnology, 2010
- Subsurface damage from helium ions as a function of dose, beam energy, and dose rateJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2009
- Etching of Graphene Devices with a Helium Ion BeamACS Nano, 2009
- Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion BeamPhysical Review Letters, 2008
- Focused Ion Beam Microscopy and MicromachiningMRS Bulletin, 2007