Synergistic Effects of Protons and Heavy Ions Irradiation on Enhanced Dual-Trench SiC MOSFETs
- 1 July 2026
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 73 (7) , 4044-4050
Abstract
No abstract availableKeywords
Funding Information
- Beijing Natural Science Foundation (L242010)
- National Key Research and Development Program of China (2023YFB3611904)
- National Key Research and Development Program of China (2023YFB3611902)
- Key Research and Development Program of Jiangxi Province (KYCX25_4003)
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