Estimation of surface-diffusion length of aluminum-containing species on 4H-SiC (0001)

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Abstract
Surface-diffusion length of aluminum-containing species ( λ Al ) on 4H-SiC (0001) is estimated from the reported aluminum concentrations in 4H-SiC grown by chemical vapor deposition flowing SiH 4 , C 3 H 8 , trimethylaluminum, and H 2 under carbon-rich conditions. Based on the surface-diffusion theory dealing with step dynamics, λ Al at 1550 °C is estimated to be about 2 nm or less, which is shorter than a half of the mean distance of steps on an 8°-off (0001) surface (i.e. 3.6 nm). This explains why the reported aluminum concentration in 4H-SiC grown on an 8°-off (0001) substrate was larger than that grown on a 4°-off (0001) substrate.

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