Infrared spectroscopy study of adsorption of silane on Si(001)
Authors:
- Masanori ShinoharaMSMasanori Shinohara
- Yasuo KimuraYKYasuo Kimura
- Mineo SaitoMSMineo Saito
- Michio NiwanoMNMichio Niwano
- 1 April 2002
- journal article
- Published by Elsevier in Surface Science
- Vol. 502-503, 96-101
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Probing the silane, disilane and germane adsorption kinetics on the silicon (001) surfaceJournal of Crystal Growth, 2000
- Probing the disilane adsorption kinetics: An alternative approachPhysical Review B, 1999
- Hydrogen adsorption and desorption processes on Si(100)Applied Surface Science, 1998
- Oxidation processes on the H2O-chemisorbed Si(100) surface studied by in-situ infrared spectroscopySurface Science, 1998
- Initial-induced Oxidation of Si(100)–Physical Review Letters, 1997
- Local arrangement of silylene groups on Si(100)2×1 aftersdecompositionPhysical Review B, 1997
- An atomically resolved scanning tunneling microscopy study of the thermal decomposition of disilane on Si(001)Surface Science, 1994
- Decomposition mechanisms of SiHx species on Si(100)-(2×1) for x=2, 3, and 4The Journal of Chemical Physics, 1990
- Decomposition of silane on Si(111)-(7×7) and Si(100)-(2×1) surfaces below 500 °CThe Journal of Chemical Physics, 1990
- Surface infrared spectroscopySurface Science Reports, 1988