(GaMn)As: GaAs-based III–V diluted magnetic semiconductors grown by molecular beam epitaxy
Authors:
- 1 May 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 175-176, 1063-1068
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAsApplied Physics Letters, 1996
- Nanometer-scale magnetic MnAs particles in GaAs grown by molecular beam epitaxyApplied Physics Letters, 1996
- Epitaxial ferromagnetic MnAs thin films grown by molecular beam epitaxy on Si (001) substratesApplied Physics Letters, 1995
- 980 nm compact optical isolators using Cd
1–
x
–
y
Mn
x
Hg
y
Tesinglecrystals for high power pumping laser diodesElectronics Letters, 1994
- Epitaxial orientation and magnetic properties of MnAs thin films grown on (001) GaAs: Template effectsApplied Physics Letters, 1994
- Molecular beam epitaxy of MnAs thin films on GaAsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1994
- New III-V diluted magnetic semiconductors (invited)Journal of Applied Physics, 1991
- Diluted magnetic III-V semiconductorsPhysical Review Letters, 1989