Quantum design strategy pushes high‐power vertical‐external‐cavity surface‐emitting lasers beyond 100 W
Authors:
- 17 August 2012
- journal article
- research article
- Published by Wiley in Laser & Photonics Reviews
- Vol. 6 (5) , L12-L14
Abstract
Combining rigorous quantum epitaxial design, highly accurate growth, novel processing and thermal management pushes the output power of single chip vertical‐external‐cavity surface‐emitting lasers (VECSELs) beyond the 100 W milestone.Keywords
Funding Information
- U. S. Joint Technology Office MRI program (AFOSR FA9550-10-1-0561)
This publication has 6 references indexed in Scilit:
- 106 W continuous-wave output power from vertical-external-cavity surface-emitting laserElectronics Letters, 2012
- 20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm2012
- Heat Management in High-Power Vertical-External-Cavity Surface-Emitting LasersIEEE Journal of Selected Topics in Quantum Electronics, 2011
- Predictive Microscopic Modeling of VECSELsIEEE Journal of Quantum Electronics, 2010
- Semiconductor disk lasers for the generation of visible and ultraviolet radiationLaser & Photonics Reviews, 2009
- Thermal Management in 2.3-$\mu{\hbox {m}}$ Semiconductor Disk Lasers: A Finite Element AnalysisIEEE Journal of Quantum Electronics, 2008