Systematic Study of Insulator Deposition Effect (Si3N4, SiO2, AlN, and Al2O3) on Electrical Properties in AlGaN/GaN Heterostructures
Authors:
- Narihiko MaedaNMNarihiko Maeda
- Masanobu HirokiMHMasanobu Hiroki
- Noriyuki WatanabeNWNoriyuki Watanabe
- Yasuhiro OdaYOYasuhiro Oda
- Haruki YokoyamaHYHaruki Yokoyama
- Takuma YagiTYTakuma Yagi
- Toshiki MakimotoTMToshiki Makimoto
- Takatomo EnokiTETakatomo Enoki
- Takashi KobayashiTKTakashi Kobayashi
- 1 February 2007
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 46 (2R)
Abstract
No abstract availableThis publication has 49 references indexed in Scilit:
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