Novel Hyperbranched Polyimides Bearing Bis(trifluoromethyl)‐triphenylamine Moiety: Preparation and Rewritable Nonvolatile Memory Behaviours
- 8 March 2021
- journal article
- research article
- Published by Wiley in ChemistrySelect
- Vol. 6 (10) , 2516-2522
Abstract
Two novel hyperbranched polyimides (HBPIs) bearing bis(trifluoromethyl)‐triphenylamine moiety were prepared by condensation polymerization of a triamine monomer, N,N‐bis[4‐amino‐2‐(trifluoromethyl)phenyl]‐1,4‐benzenediamine (ATPB), with oxydiphthalic dianhydride (ODPA) and hexafluoroisopropyl phthalic anhydride (6FDA). The trifluoromethyl group was introduced into HBPIs to improve the property of the memory device. The resulting hyperbranched polyimides exhibited high molecular weights (weight‐average molecular weights large to 7.51×10 4 with a polydispersity of 1.63), outstanding organic‐solubility and excellent thermal stability (5 % thermal weight‐loss temperature up to 518 °C). Memory devices based on these hyperbranched polyimides showed similar rewritable nonvolatile memory characteristics but with different threshold voltages. The switching voltage was found to have a dependence on the energy barrier between polymer active layer and electrodes. These devices displayed favorable stability in both OFF and ON states with retention time long to 10 4 s and ON/OFF current ratio as high as 10 6 . The space charge‐limited conduction model and local filaments formation were responsible for the switching behaviors of these memory devices. The results indicate that these hyperbranched polyimides are promising candidates for polymer memory application.Keywords
This publication has 44 references indexed in Scilit:
- Effects of terminal electron acceptor strength on film morphology and ternary memory performance of triphenylamine donor based devicesJournal of Materials Chemistry C, 2013
- Linkage effect on the memory behavior of sulfonyl-containing aromatic polyether, polyester, polyamide, and polyimideChemical Communications, 2013
- Tailoring of Molecular Planarity to Reduce Charge Injection Barrier for High‐Performance Small‐Molecule‐Based Ternary Memory Device with Low Threshold VoltageAdvanced Materials, 2012
- Nonvolatile bistable resistive switching in a new polyimide bearing 9-phenyl-9H-carbazole pendantJournal of Materials Chemistry, 2011
- Ultrathin SWNT Films with Tunable, Anisotropic Transport PropertiesAdvanced Functional Materials, 2011
- High Temperature Polyimide Containing Anthracene Moiety and Its Structure, Interface, and Nonvolatile Memory BehaviorACS Applied Materials & Interfaces, 2011
- Electrically bistable nonvolatile switching devices fabricated with a high performance polyimide bearing diphenylcarbamyl moietiesJournal of Materials Chemistry, 2009
- Synthesis and Dynamic Random Access Memory Behavior of a Functional PolyimideJournal of the American Chemical Society, 2006
- Dielectric breakdown of polymer films containing metal clustersJournal of Applied Physics, 1988
- On Pre-Breakdown Phenomena in Insulators and Electronic Semi-ConductorsPhysical Review B, 1938