Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part II: DC and AC Model Description
Authors:
- 11 August 2015
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 62 (9) , 2760-2768
Abstract
A detailed presentation of the latest version of Leti-UTSOI compact model is provided. Leti-UTSOI2 is the first available model able to describe the behavior of ultrathin body and BOX fully depleted silicon-on-insulator transistors in all bias configurations, including strong forward back bias. In this paper, compact modeling of intrinsic currents and charges, including all physical effects required to describe decananometer transistors, is detailed. This model is valid for all independent double-gate architectures, very accurate and feature excellent predictability over technological parameters.Keywords
Funding Information
- PLACES2BE Project, co-funded by grants from Belgium, France, Romania, Sweden, the Netherlands
- ENIAC Joint (325633)
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