Mechanism of subpicosecond electrical pulse generation by asymmetric excitation

Authors:

25 December 1989

journal article
conference paper
Published by AIP Publishing in Applied Physics Letters

Vol. 55 (26) , 2748-2750
DOI:10.1063/1.101942

Abstract

Using full-wave analysis, the motion of the electric field in a coplanar transmission line (two parallel lines) fabricated on nondamaged silicon-on-sapphire when a part of the gap between the two lines is excited by ultrashort optical pulse is demonstrated and the mechanism for the electrical pulse generation is discussed.

Keywords

This publication has 7 references indexed in Scilit:

Generation of picosecond electrical pulses by a pulse-forming optoelectronic device
Applied Physics Letters, 1989
Subpicosecond electrical pulse generation using photoconductive switches with long carrier lifetimes
Applied Physics Letters, 1989
Picosecond GaAs-based photoconductive optoelectronic detectors
Applied Physics Letters, 1989
1 THz-bandwidth proper for high-speed devices and integrated circuits
Electronics Letters, 1987
Generation of subpicosecond electrical pulses on coplanar transmission lines
Applied Physics Letters, 1986
Picosecond Photoconductivity In 3He+ Bombarded Inp
1983
Picosecond photoconductivity in radiation-damaged silicon-on-sapphire films
Applied Physics Letters, 1981