Electrical Transport Properties of p-GaN
Authors:
- Hisashi NakayamaHNHisashi Nakayama
- Peter HackePHPeter Hacke
- Mohammad Rezaul Huque KhanMKMohammad Rezaul Huque Khan
- Theeradetch DetchprohmTDTheeradetch Detchprohm
- Kazumasa HiramatsuKHKazumasa Hiramatsu
- Nobuhiko SawakiNSNobuhiko Sawaki
- 1 March 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (3A) , L282-284
Abstract
Electrical transport properties of Mg-doped p-GaN grown by organometallic vapor phase epitaxy were studied between 100 and 700 K. Calculations using Fermi-Dirac statistigs were carried out, identifying the majority carrier to be holes over the whole temperature range considered. The acceptor level is 0.17 ± 0.01 eV. The hole mobility is 10 cm2/V·s and is almost temperature independent from 160 to 300 K. The detailed analysis employing Fermi-Dirac statistics was then extended to determine the temperature dependence of the Fermi level.Keywords
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