The Effects of Gate-Connected Field Plates on Hotspot Temperatures of AlGaN/GaN HEMTs
Authors:
- Canberk DundarCDCanberk Dundar
- Dogacan KaraDKDogacan Kara
- Nazli DonmezerNDNazli Donmezer
- 5 December 2019
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 67 (1) , 57-62
Abstract
No abstract availableKeywords
Funding Information
- Türkiye Bilimsel ve Teknolojik Araştırma Kurumu (115E756)
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