High modulation efficiency micro-ring modulator with low driving voltage for high speed optical interconnection

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Abstract
A high modulation efficiency depletion mode silicon micro-ring modulator with NRZ modulation rate up to 128 Gb/s has been demonstrated. The MRM utilizes a meandering doping structure to enhance the overlap factor between the carrier variation region and light field to improve modulation efficiency at 33.5 pm/V, ∼38% improvement from a conventional doping design. It has a quality factor of ∼5200, a high electro-optical bandwidth above 67 GHz, and can reach 110 GHz under the optical peaking effect. The drive voltage of the MRM loading a 128 Gb/s signal is 1.36 V; the corresponding power consumption is ∼8.54 fJ/bit.
Funding Information
  • National Key Research and Development Program of China (2023YFB2806600)
  • National Natural Science Foundation of China (No. 62105115, No. 62125503, No. 62261160388)
  • Key Research and Development Program of Hubei Province (No. 2023BIB016, No. 2021BAA004)
  • Natural Science Foundation of Hubei Province (No. 2023AFA028)
  • Ministry of Industry and Information Technology of the People's Republic of China
  • Innovation Project of Optics Valley Laboratory (No. OVL2023ZD004)

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