Self-Catalyzed GaAsP Nanowires Grown on Silicon Substrates by Solid-Source Molecular Beam Epitaxy

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Abstract
We realize the growth of self-catalyzed GaAsP nanowires (NWs) on silicon (111) substrates using solid-source molecular beam epitaxy. By optimizing the V/III and P/As flux ratios, as well as the Ga flux, high-crystal-quality GaAsP NWs have been demonstrated with almost pure zinc-blende phase. Comparing the growth of GaAsP NWs with that of the conventional GaAs NWs indicates that the incorporation of P has significant effects on catalyst nucleation energy, and hence the nanowire morphology and crystal quality. In addition, the incorporation ratio of P/As between vapor–liquid–solid NW growth and the vapor–solid thin film growth has been compared, and the difference between these two growth modes is explained through growth kinetics. The vapor–solid epitaxial growth of radial GaAsP shell on core GaAsP NWs is further demonstrated with room-temperature emission at ∼710 nm. These results give valuable new information into the NW nucleation mechanisms and open up new perspectives for integrating III–V nanowire photovoltaics and visible light emitters on a silicon platform by using self-catalyzed GaAsP core–shell nanowires.

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