Large-Area MOCVD Growth of Ga2O3 in a Rotating Disc Reactor
Authors:
- Nick M. SbrockeyNSNick M. Sbrockey
- Youngboo MoonYMYoungboo Moon
- Myung Sik KimMKMyung Sik Kim
- 12 December 2014
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 44 (5) , 1357-1360
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Thermal annealing effect on material characterizations of β-Ga2O3 epilayer grown by metal organic chemical vapor depositionApplied Physics Letters, 2013
- Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substratesApplied Physics Letters, 2012
- Oxygen sensing properties at high temperatures of β-Ga2O3 thin films deposited by the chemical solution deposition methodJournal of Applied Physics, 2007
- Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectorsApplied Physics Letters, 2007
- Growth and spectral characterization of β-Ga2O3 single crystalsJournal of Physics and Chemistry of Solids, 2006
- High Temperature Oxygen Sensor Using a Pt–Ga2O3–Pt Sandwich StructureJapanese Journal of Applied Physics, 2004
- Metal–oxide–semiconductor devices using Ga2O3 dielectrics on n-type GaNApplied Physics Letters, 2003
- Deep-ultraviolet transparent conductive β-Ga2O3 thin filmsApplied Physics Letters, 2000
- Ga2O3 films for electronic and optoelectronic applicationsJournal of Applied Physics, 1995
- Optical Absorption and Photoconductivity in the Band Edge ofPhysical Review B, 1965