PHOTOEMISSION OF ELECTRONS AND HOLES INTO SILICON NITRIDE
Author:
- 15 October 1968
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 13 (8) , 275-277
Abstract
The photoemission of both electrons and holes from degenerate silicon into thin (160–270 Å) layers of silicon nitride has been observed. The threshold energies for these processes are found to be 3.17 ± 0.1 eV for electrons and 3.06 ± 0.1 eV for holes. In addition, the photoemission of electrons from aluminum into silicon nitride has been observed; the threshold energy in this case is 2.11 ± 0.1 eV. An approximate electron energy band diagram for silicon nitride based on these values is presented.Keywords
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