0.2V adiabatic NC-FinFET with 0.6mA/µm ION and 0.1nA/µm IOFF

Authors:

1 June 2015

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 15483770,p. 39-40
DOI:10.1109/drc.2015.7175542

Abstract

We present for the first time a Negative Capacitance (NC) FinFET. Simulation shows 0.2V operation with 0.6mA/μm on-current and 100pA/μm leakage current. A simple model guides the optimization of the ferroelectric film and the FinFET in the NC-FinFET. Our finding that a weak ferroelectric material is preferable greatly increases the candidate material classes and we report the target properties to search for. Counterintuitively, the gate to S/D capacitance and a thicker EOT both reduce the required V _DD . NC-FinFET is good for high performance and very low power applications.

Keywords

This publication has 1 reference indexed in Scilit:

Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Nano Letters, 2007