Evidence of Spin Frustration in a Vanadium Diselenide Monolayer Magnet
- 18 April 2019
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 31 (23) , e1901185
Abstract
Monolayer VSe2, featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic 2D transition‐metal dichalcogenides (2D‐TMDs). Herein, by means of in situ microscopy and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X‐ray and angle‐resolved photoemission, and X‐ray absorption, direct spectroscopic signatures are established, that identify the metallic 1T‐phase and vanadium 3d1 electronic configuration in monolayer VSe2 grown on graphite by molecular‐beam epitaxy. Element‐specific X‐ray magnetic circular dichroism, complemented with magnetic susceptibility measurements, further reveals monolayer VSe2 as a frustrated magnet, with its spins exhibiting subtle correlations, albeit in the absence of a long‐range magnetic order down to 2 K and up to a 7 T magnetic field. This observation is attributed to the relative stability of the ferromagnetic and antiferromagnetic ground states, arising from its atomic‐scale structural features, such as rotational disorders and edges. The results of this study extend the current understanding of metallic 2D‐TMDs in the search for exotic low‐dimensional quantum phenomena, and stimulate further theoretical and experimental studies on van der Waals monolayer magnets.Keywords
All Related Versions
Funding Information
- Ministry of Education - Singapore (MOE2016‐T2‐2‐110, R‐143‐000‐652‐112)
- Office of Science (DE‐AC02‐05CH11231)
This publication has 51 references indexed in Scilit:
- Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS2 and WS2Nature Physics, 2015
- Strongly enhanced charge-density-wave order in monolayer NbSe2Nature Nanotechnology, 2015
- Gate-tunable phase transitions in thin flakes of 1T-TaS2Nature Nanotechnology, 2015
- Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2Nature Nanotechnology, 2013
- The chemistry of two-dimensional layered transition metal dichalcogenide nanosheetsNature Chemistry, 2013
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenidesNature Nanotechnology, 2012
- Control of valley polarization in monolayer MoS2 by optical helicityNature Nanotechnology, 2012
- Valley polarization in MoS2 monolayers by optical pumpingNature Nanotechnology, 2012
- Coupled Spin and Valley Physics in Monolayers ofand Other Group-VI DichalcogenidesPhysical Review Letters, 2012
- Atomically Thin: A New Direct-Gap SemiconductorPhysical Review Letters, 2010