A Phenomenological Mathematical Model on I – V Curve of p-n Junctions in Semiconductor Diodes
- 1 October 2026
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 73 (10) , 5960-5973
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Improved value for the silicon intrinsic carrier concentration at 300 KApplied Physics Letters, 1990
- Experimental verification of the Shockley–Read–Hall recombination theory in siliconElectronics Letters, 1973
- Low temperature breakdown in silicon Zener diodePhysics Letters A, 1967
- TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORSApplied Physics Letters, 1966
- Effect of junction curvature on breakdown voltage in semiconductorsSolid-State Electronics, 1966
- Avalanche Breakdown in Gallium ArsenideJunctionsPhysical Review B, 1962
- Ionization Rates for Electrons and Holes in SiliconPhysical Review B, 1958
- Avalanche Breakdown in GermaniumPhysical Review B, 1955
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949