Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substrates
Authors:
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 772-778
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Si-doping of MOCVD GaAs: Closer analysis of the incorporation processJournal of Crystal Growth, 1989
- Orientation dependence of GaAs growth in low-pressure OMVPEJournal of Crystal Growth, 1987
- A Study of Silicon Incorporation in GaAs MOCVD LayersJournal of the Electrochemical Society, 1985
- Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation DependenceJournal of the Electrochemical Society, 1983
- Electrical properties of epitaxial indium phosphide films grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1981
- Vapor growth of epitaxial GaAs: A summary of parameters which influence the purity and morphology of epitaxial layersJournal of Crystal Growth, 1972
- Behavior of Te in Vapor-Grown GaPJournal of the Electrochemical Society, 1971
- Orientation Effects in GaP Vapor Phase Epitaxial GrowthJapanese Journal of Applied Physics, 1969
- The Effect of Substrate Orientation on the Incorporation of Zinc and Selenium in Vapor-Grown Gallium PhosphideJournal of the Electrochemical Society, 1969
- The Effect of Orientation on the Electrical Properties of Epitaxial Gallium ArsenideJournal of the Electrochemical Society, 1964