Enhanced brightness and efficiency in organic electroluminescent devices using SiO2 buffer layers
Authors:
- 12 April 1999
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (15) , 2227-2229
Abstract
Organic electroluminescent devices using as a hole-injecting buffer have been fabricated. With the presence of the buffer, the luminance of the device reaches at the current density of which corresponds to an efficiency of 9.1 cd/A. The enhancements in brightness and efficiency are attributed to an improved balance of hole and electron injections due to blocking of the injected holes by the buffer layer and a more homogeneous adhesion of the hole transporting layer to the anode.
Keywords
This publication has 16 references indexed in Scilit:
- Bright organic electroluminescent devices having a metal-doped electron-injecting layerApplied Physics Letters, 1998
- Fabrication of highly efficient organic electroluminescent devicesApplied Physics Letters, 1998
- Highly efficient and bright organic electroluminescent devices with an aluminum cathodeApplied Physics Letters, 1997
- Fabrication and electroluminescence of double-layered organic light-emitting diodes with the Al2O3/Al cathodeApplied Physics Letters, 1997
- Enhanced electron injection in organic electroluminescence devices using an Al/LiF electrodeApplied Physics Letters, 1997
- Carrier tunneling and device characteristics in polymer light-emitting diodesJournal of Applied Physics, 1994
- Confinement of charge carriers and molecular excitons within 5-nm-thick emitter layer in organic electroluminescent devices with a double heterostructureApplied Physics Letters, 1990
- Electroluminescence of doped organic thin filmsJournal of Applied Physics, 1989
- Organic Electroluminescent Device with a Three-Layer StructureJapanese Journal of Applied Physics, 1988
- Organic electroluminescent diodesApplied Physics Letters, 1987