Growth of Ultrathin Epitaxial 3C-SiC Films on Si(100) by Pulsed Supersonic Free Jets of CH3SiH3
Authors:
- Yoshifumi IkomaYIYoshifumi Ikoma
- Takao EndoTETakao Endo
- Fumiya WatanabeFWFumiya Watanabe
- Teruaki MotookaTMTeruaki Motooka
- 1 March 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (3B) , L301-303
Abstract
We have developed a new method for epitaxial growth of ultrathin (∼nm) 3C-SiC films on Si(100) by pulsed supersonic free jets of methylsilane (CH3SiH3). It was found that pit formation at the SiC/Si(100) interface was suppressed by increasing the pulse width and the surface roughness was decreased by decreasing the number of CH3SiH3 jet pulses. A linear relationship was observed between the film thickness and the pulse number in the thin film region of less than ≈40 nm, while the growth rate was decreased and the thickness was eventually saturated for further pulse irradiation.Keywords
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