TFLN MZM Operating at 1- μ m Wavelength With Low Vπ and High Bandwidth

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Abstract
Thin-film lithium niobate (TFLN) electro-optic modulators have been widely explored at 1550 nm, achieving ultra-low driving voltages, broad bandwidths, and compact footprints. Yet, development at 1064 nm has remained comparatively limited, despite its growing importance for applications that demand high power and cost-effective integration with CMOS-compatible silicon photodetectors such as free-space optics, frequency combs and biophotonics. In this work, we demonstrate a high-efficiency TFLN modulator operating at 1064 nm contributing to fulfilling this gap. The device employs a 1 cm-long interaction region with capacitively loaded traveling-wave electrodes designed to minimize the velocity mismatch between RF and optical modes, achieving an index mismatch as low as 0.05. This careful optimization enables a high frequency half-wave voltage of 1.45 V and a 40 GHz 3-dB bandwidth, representing the best performance reported to date for 1064 nm operation. These results highlight the potential of TFLN modulators to extend beyond traditional telecom wavelengths leveraging lower V $\pi $ , high quality lasers and easy integration with Si photodetectors.
Funding Information
  • Office of Naval Research

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