Tin Oxide Based P and N-Type Thin Film Transistors Developed by RF Sputtering
Open Access
- 28 July 2015
- journal article
- Published by The Electrochemical Society in ECS Journal of Solid State Science and Technology
- Vol. 4 (9) , Q101-Q104
Abstract
Tin oxide has been demonstrated as an ideal material for fabricating p-type and n-type thin film transistors (TFTs) for transparent CMOS type device fabrication. Both p and n-type conduction was observed in the thin films, prepared from metallic tin target by simply varying the oxygen flow rate during RF magnetron sputter deposition. Films deposited at room temperature were amorphous in nature, which after annealing at 200°C in air, crystallized to SnO and/or SnO2 phases. The TFTs fabricated on thermally oxidized silicon substrates showed high field effect mobility of 4.13 and 16 cm2/Vs with drain current on-off ratio 6 × 102 and 107 respectively for SnO p-type and SnO2 n-type TFTs. These are the highest values for p-type and n-type oxide TFTs fabricated from same source material.Keywords
This publication has 28 references indexed in Scilit:
- Complementary Metal Oxide Semiconductor Technology With and On PaperAdvanced Materials, 2011
- Thin-Film Transistors Based on Indium Molybdenum Oxide Semiconductor Layers Sputtered at Room TemperatureIEEE Electron Device Letters, 2011
- Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defectsApplied Physics Letters, 2011
- Optical and Carrier Transport Properties of Cosputtered Zn–In–Sn–O Films and Their Applications to TFTsJournal of the Electrochemical Society, 2008
- High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopperApplied Physics Letters, 2007
- Transparent thin film transistors based on indium oxide semiconductorJournal of Non-Crystalline Solids, 2006
- Towards See‐Through Displays: Fully Transparent Thin‐Film Transistors Driving Transparent Organic Light‐Emitting DiodesAdvanced Materials, 2006
- Electronic Structures and Device Applications of Transparent Oxide Semiconductors: What Is the Real Merit of Oxide Semiconductors?International Journal of Applied Ceramic Technology, 2005
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductorsNature, 2004
- Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperatureApplied Physics Letters, 2004