Effect of annealing in oxygen radicals on luminescence and electrical conductivity of ZnO:N films
Authors:
- 1 March 2002
- journal article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 36 (3) , 265-269
Abstract
It is shown that the introduction of a nitrogen acceptor impurity when growing zinc oxide films can result in the formation of hole conduction only after annealing in atomic oxygen vapor. Annealing afKeywords
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