On the profile of frequency dependent series resistance and surface states in Au/Bi4Ti3O12/SiO2/n-Si(MFIS) structures
Authors:
- 1 January 2008
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 85 (1) , 81-88
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodesMicroelectronic Engineering, 2006
- Temperature-dependent properties of organic-on-inorganic Ag/p-CuPc/n-GaAs/Ag photoelectric cellSolar Energy Materials and Solar Cells, 2005
- Memory properties of metal/ferroelectric/semiconductor and metal/ferroelectric/insulator/semiconductor structures using rf sputtered ferroelectric Sr 0.8 Bi 2.5 Ta 1.2 Nb 0.8 O 9 thin filmsJournal of the European Ceramic Society, 2004
- PZT Based MFS Structure for FeFETIntegrated Ferroelectrics, 2003
- Characterization of Ferroelectricity in the Pt/YMnO 3 /SiO 2 /Si Structure by C-V MeasurementFerroelectrics, 2002
- Impact of face-to-face annealing in preparation of sol-gel-derived SrBi2Ta2O9 thin filmsApplied Physics Letters, 2000
- Lanthanum-substituted bismuth titanate for use in non-volatile memoriesNature, 1999
- New technique for the determination of series resistance of Schottky barrier diodesSolid-State Electronics, 1992
- A single-frequency approximation for interface-state density determinationSolid-State Electronics, 1980
- Optical switching characteristics of epitaxial bismuth titanate films for matrix-addressed displaysFerroelectrics, 1976