Vertical integration of ultrafast semiconductor lasers
- 22 August 2007
- journal article
- research article
- Published by Springer Nature in Applied Physics B
- Vol. 88 (4) , 493-497
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- 50-GHz Passively Mode-Locked Surface-Emitting Semiconductor Laser With 100-mW Average Output PowerIEEE Journal of Quantum Electronics, 2006
- Passively modelocked surface-emitting semiconductor lasersPhysics Reports, 2006
- Functional imaging with cellular resolution reveals precise micro-architecture in visual cortexNature, 2005
- Ultrafast solid-state lasers2004
- High-power surface emitting semiconductor laser with extended vertical compound cavityElectronics Letters, 2003
- Photonic Crystal FibersScience, 2003
- Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average powerApplied Physics Letters, 2002
- Optical frequency metrologyNature, 2002
- High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beamsIEEE Photonics Technology Letters, 1997
- Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers: an antiresonant semiconductor Fabry–Perot saturable absorberOptics Letters, 1992