Evaluation of two-dimensional strain distribution by STEM/NBD
Authors:
- 1 July 2011
- journal article
- Published by Elsevier in Ultramicroscopy
- Vol. 111 (8) , 995-998
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Nanoscale holographic interferometry for strain measurements in electronic devicesNature, 2008
- Direct Mapping of Strain in a Strained Silicon Transistor by High-Resolution Electron MicroscopyPhysical Review Letters, 2008
- Analysis of Local Lattice Strain Around Oxygen Precipitates in Czochralski-Grown Silicon Wafers Using Convergent Beam Electron DiffractionJapanese Journal of Applied Physics, 1999
- Using the Hough transform for HOLZ line identification in convergent beam electron diffractionJournal of Microscopy, 1999
- Quantitative determination of lattice parameters from CBED patterns: accuracy and performanceUltramicroscopy, 1998
- Dynamical diffraction effect on HOLZ-pattern geometry in Si-Ge alloys and determination of local lattice parameterUltramicroscopy, 1994
- Process-induced mechanical stress in isolation structures studied by micro-Raman spectroscopyJournal of Applied Physics, 1993
- Determination of multiple lattice parameters from convergent-beam electron diffraction patternsUltramicroscopy, 1993
- Triangular Shaped Beam Technique in EB Exposure System EX-7 for ULSI Pattern FormationJapanese Journal of Applied Physics, 1989
- X-ray diffraction topographs of silicon crystals with superposed oxide film. III. Intensity distributionJournal of Applied Physics, 1973