Characterization of a 3.3-kV Si-SiC Hybrid Power Module in Half-Bridge Topology for Traction Inverter Application

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Abstract
A state-of-the-art 3.3-kV/450-A hybrid power module for the next generation traction inverter of rolling stock is reported in this paper, combining the Si IGBT and SiC SBD chips. Compared with the existing hybrid technology at the same voltage level, this module is characterized by a half-bridge topology, in which 6 IGBT and 12 SBD chips are integrated in each switch. The outnumbering of the diodes represents a promising mitigation to the low availability of SBDs at this voltage level. Both static and dynamic test of this module and an equivalent Si-based module are carried out comparatively. Apart from describing the features of compactness, low-inductance and good current distribution among chips, this module is characterized by low turn-on current overshooting and turn-on loss of IGBTs, negligible diode reverse recovery time and loss, as well as flexible allowance of IGBT turn-on current rising rate dI/dt. A parameterized study is carried out to benchmark the advantage of this new topology. Based on the experimental results, the performance of the hybrid module in a three-phase traction inverter circuit is also evaluated by means of electro-thermal simulation. The hybrid module distinguishes itself by describing much lower power loss and junction temperature than its Si-based counterpart.

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