High Spectrum Selectivity Ultraviolet Photodetector Fabricated from an n-ZnO/p-GaN Heterojunction
Authors:
- 26 November 2008
- journal article
- research article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry C
- Vol. 112 (51) , 20546-20548
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Zn 0.76 Mg 0.24 O homojunction photodiode for ultraviolet detectionApplied Physics Letters, 2007
- Schottky ultraviolet photodiode using a ZnO hydrothermally grown single crystal substrateApplied Physics Letters, 2007
- Electrical properties of ZnO/GaN heterostructures and photoresponsivity of ZnO layersphysica status solidi (c), 2006
- ZnO devices: Photodiodes and p-type field-effect transistorsApplied Physics Letters, 2005
- A comprehensive review of ZnO materials and devicesJournal of Applied Physics, 2005
- ZnO MSM photodetectors with Ru contact electrodesJournal of Crystal Growth, 2005
- Compositionally-tuned epitaxial cubic MgxZn1−xO on Si(100) for deep ultraviolet photodetectorsApplied Physics Letters, 2003
- ZnO Schottky ultraviolet photodetectorsJournal of Crystal Growth, 2001
- Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin filmsApplied Physics Letters, 2001
- Ultraviolet detectors based on epitaxial ZnO films grown by MOCVDJournal of Electronic Materials, 2000