Memory traces ruled by surface-biased REDOX reactions

Authors:
  • RSRafael Schio Wengenroth Silva
    Rafael Schio Wengenroth Silva
  • LMLucas Augusto Moisés
    Lucas Augusto Moisés
  • ACAdenilson José Chiquito
    Adenilson José Chiquito
  • MGMarcio Peron Franco de Godoy
    Marcio Peron Franco de Godoy
  • FHFabian Hartmann
    Fabian Hartmann
  • VLVictor Lopez-Richard
    Victor Lopez-Richard
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Abstract
Gas and moisture sensing devices leveraging the resistive switching effect in transition metal oxide memristors promise to revolutionize next-generation, nano-scaled, cost-effective, and environmentally sustainable sensor solutions. These sensors encode readouts in resistance state changes based on gas concentration, yet their nonlinear current-voltage characteristics offer richer dynamics, capturing detailed information about REDOX reactions and surface kinetics. Traditional vertical devices fail to fully exploit this complexity. This study demonstrates planar resistive switching devices, moving beyond the Butler-Volmer model. A systematic investigation of the electrochemical processes in Na-doped ZnO with lateral planar contacts reveals intricate patterns resulting from REDOX reactions on the device surface. When combined with advanced algorithms for pattern recognition, allow the analysis of complex switching patterns, including crossings, loop directions, and resistance values, providing unprecedented insights for next-generation complex sensors.

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